WSD60N10GDN56 N-kanal 100V 60A DFN5X6-8 WINSOK MOSFET
Ħarsa ġenerali tal-prodott WINSOK MOSFET
Il-vultaġġ ta 'WSD60N10GDN56 MOSFET huwa 100V, il-kurrent huwa 60A, ir-reżistenza hija 8.5mΩ, il-kanal huwa N-channel, u l-pakkett huwa DFN5X6-8.
WINSOK MOSFET oqsma ta 'applikazzjoni
E-sigaretti MOSFET, iċċarġjar mingħajr fili MOSFET, muturi MOSFET, drones MOSFET, kura medika MOSFET, ċarġers tal-karozzi MOSFET, kontrolluri MOSFET, prodotti diġitali MOSFET, apparat domestiku żgħir MOSFET, elettronika għall-konsumatur MOSFET.
Qasam ta 'applikazzjoni MOSFETWINSOK MOSFET jikkorrispondi għal numri oħra ta' materjal tad-ditta
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEON,IRTOSFET3.MOSFET3 PH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semikondutturi MOSFET PDC92X.
Parametri MOSFET
| Simbolu | Parametru | Klassifikazzjoni | Unitajiet |
| VDS | Drain-Source Vultaġġ | 100 | V |
| VGS | Vultaġġ Gate-Source | ±20 | V |
| ID@TC=25℃ | Ixxotta Kontinwu Kurrent | 60 | A |
| IDP | Ixxotta Pulsed Kurrent | 210 | A |
| EAS | Enerġija valanga, Polz Uniku | 100 | mJ |
| PD@TC=25℃ | Dissipazzjoni totali tal-Enerġija | 125 | W |
| TSTG | Firxa tat-Temperatura tal-Ħażna | -55 sa 150 | ℃ |
| TJ | Firxa tat-Temperatura tal-Junction Operattiva | -55 sa 150 | ℃ |
| Simbolu | Parametru | Kundizzjonijiet | Min. | Tip. | Max. | Unità |
| BVDSS | Vultaġġ ta' Tkissir tad-Drain-Source | VGS=0V , ID=250uA | 100 | --- | --- | V |
| Drejn-Sors statiku On-Reżistenza | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Vultaġġ tal-Għatba tal-Bieb | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Kurrent ta' Tnixxija tad-Drain-Source | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Kurrent tat-tnixxija tal-bieb-sors | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Ħlas totali tal-bieb (10V) | VDS=50V , VGS=10V , ID=25A | --- | 49.9 | --- | nC |
| Qgs | Ħlas tal-Bieb-Sors | --- | 6.5 | --- | ||
| Qgd | Ħlas tal-Gat-Ixxotta | --- | 12.4 | --- | ||
| Td(on) | Ħin ta' Dewmien għall-Ixgħel | VDD=50V , VGS=10V ,RG=2.2Ω, ID=25A | --- | 20.6 | --- | ns |
| Tr | Żmien Żmien | --- | 5 | --- | ||
| Td (mitfi) | Ħin ta' Dewmien għat-Tfigħ | --- | 51.8 | --- | ||
| Tf | Ħin tal-waqgħa | --- | 9 | --- | ||
| Ciss | Kapaċità tad-dħul | VDS=50V , VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Kapaċità tal-ħruġ | --- | 362 | --- | ||
| Crss | Kapaċità tat-Trasferiment Reverse | --- | 6.5 | --- | ||
| IS | Sors Kontinwu Kurrent | VG=VD=0V , Forza Kurrent | --- | --- | 60 | A |
| ISP | Sors Pulse Kurrent | --- | --- | 210 | A | |
| VSD | Vultaġġ 'l quddiem tad-diode | VGS=0V , IS=12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Ħin ta' Irkupru Reverse | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Ħlas ta' Irkupru Reverse | --- | 106.1 | --- | nC |
