WSD6070DN56 N-kanal 60V 80A DFN5X6-8 WINSOK MOSFET
Ħarsa ġenerali tal-prodott WINSOK MOSFET
Il-vultaġġ ta 'WSD6070DN56 MOSFET huwa 60V, il-kurrent huwa 80A, ir-reżistenza hija 7.3mΩ, il-kanal huwa N-channel, u l-pakkett huwa DFN5X6-8.
WINSOK MOSFET oqsma ta 'applikazzjoni
E-sigaretti MOSFET, iċċarġjar mingħajr fili MOSFET, muturi MOSFET, drones MOSFET, kura medika MOSFET, ċarġers tal-karozzi MOSFET, kontrolluri MOSFET, prodotti diġitali MOSFET, apparat domestiku żgħir MOSFET, elettronika għall-konsumatur MOSFET.
WINSOK MOSFET jikkorrispondi għal numri oħra ta 'materjal tad-ditta
POTENS Semikondutturi MOSFET PDC696X.
Parametri MOSFET
| Simbolu | Parametru | Klassifikazzjoni | Unitajiet |
| VDS | Drain-Source Vultaġġ | 60 | V |
| VGS | Gate-Source Vultaġġ | ±20 | V |
| TJ | Temperatura massima tal-junction | 150 | °C |
| ID | Firxa tat-Temperatura tal-Ħażna | -55 sa 150 | °C |
| IS | Diode Kontinwu Kurrenti 'l quddiem, TC=25°C | 80 | A |
| ID | Kurrent Kontinwu tad-Drain, VGS=10V,TC=25°C | 80 | A |
| Kurrent Kontinwu tad-Drain, VGS=10V,TC=100°C | 66 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 300 | A |
| PD | Dissipazzjoni tal-Enerġija Massima, TC=25°C | 150 | W |
| Dissipazzjoni tal-Enerġija Massima, TC=100°C | 75 | W | |
| RθJA | Reżistenza Termali-Junction għall-Ambjent ,t =10s ̀ | 50 | °C/W |
| Reżistenza termali-junction għall-ambjent, Stat fiss | 62.5 | °C/W | |
| RqJC | Reżistenza Termali-Junction għall-Każ | 1 | °C/W |
| IAS | Kurrent tal-valanga, Polz Uniku, L=0.5mH | 30 | A |
| EAS | Enerġija valanga, Polz Uniku, L=0.5mH | 225 | mJ |
| Simbolu | Parametru | Kundizzjonijiet | Min. | Tip. | Max. | Unità |
| BVDSS | Vultaġġ ta' Tkissir tad-Drain-Source | VGS=0V , ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoeffiċjent tat-Temperatura | Referenza għal 25℃, ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Drejn-Sors statiku On-Reżistenza2 | VGS=10V , ID=40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Vultaġġ tal-Għatba tal-Bieb | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Koeffiċjent tat-Temperatura | --- | -6.94 | --- | mV/℃ | |
| IDSS | Kurrent ta' Tnixxija tad-Drain-Source | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Kurrent tat-tnixxija tal-bieb-sors | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Transkonduttanza 'l quddiem | VDS=5V , ID=20A | --- | 50 | --- | S |
| Rg | Reżistenza tal-bieb | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Ħlas totali tal-bieb (10V) | VDS=30V , VGS=10V , ID=40A | --- | 48 | --- | nC |
| Qgs | Ħlas tal-Bieb-Sors | --- | 17 | --- | ||
| Qgd | Ħlas tal-Gat-Ixxotta | --- | 12 | --- | ||
| Td(on) | Ħin ta' Dewmien għall-Ixgħel | VDD=30V , VĠEN=10V , RG=1Ω, ID=1A ,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Żmien Żmien | --- | 10 | --- | ||
| Td (mitfi) | Ħin ta' Dewmien għat-Tfigħ | --- | 40 | --- | ||
| Tf | Ħin tal-waqgħa | --- | 35 | --- | ||
| Ciss | Kapaċità tad-dħul | VDS=30V , VGS=0V , f=1MHz | --- | 2680 | --- | pF |
| Coss | Kapaċità tal-ħruġ | --- | 386 | --- | ||
| Crss | Kapaċità tat-Trasferiment Reverse | --- | 160 | --- |
