WSD40120DN56 N-kanal 40V 120A DFN5X6-8 WINSOK MOSFET
Ħarsa ġenerali tal-prodott WINSOK MOSFET
Il-vultaġġ ta 'WSD40120DN56 MOSFET huwa 40V, il-kurrent huwa 120A, ir-reżistenza hija 1.85mΩ, il-kanal huwa N-channel, u l-pakkett huwa DFN5X6-8.
WINSOK MOSFET oqsma ta 'applikazzjoni
E-sigaretti MOSFET, MOSFET iċċarġjar mingħajr fili, drones MOSFET, MOSFET tal-kura medika, ċarġers tal-karozzi MOSFET, kontrolluri MOSFET, prodotti diġitali MOSFET, apparat domestiku żgħir MOSFET, MOSFET elettronika għall-konsumatur.
WINSOK MOSFET jikkorrispondi għal numri oħra ta 'materjal tad-ditta
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET TPH484SFIT. MOSFET PJQ544.NIKO-SEM MOSFET PKCSBB.POTENS Semikondutturi MOSFET PDC496X.
Parametri MOSFET
| Simbolu | Parametru | Klassifikazzjoni | Unitajiet |
| VDS | Drain-Source Vultaġġ | 40 | V |
| VGS | Gate-Source Vultaġġ | ±20 | V |
| ID@TC=25℃ | Kurrent Kontinwu tad-Drain, VGS@ 10V1,7 | 120 | A |
| ID@TC=100℃ | Kurrent Kontinwu tad-Drain, VGS@ 10V1,7 | 100 | A |
| IDM | Ixxotta Pulsed Kurrent2 | 400 | A |
| EAS | Enerġija valanga tal-Impuls Uniku3 | 240 | mJ |
| IAS | Kurrent tal-valanga | 31 | A |
| PD@TC=25℃ | Dissipazzjoni ta' Enerġija Totali4 | 104 | W |
| TSTG | Firxa tat-Temperatura tal-Ħażna | -55 sa 150 | ℃ |
| TJ | Firxa tat-Temperatura tal-Junction Operattiva | -55 sa 150 | ℃ |
| Simbolu | Parametru | Kundizzjonijiet | Min. | Tip. | Max. | Unità |
| BVDSS | Vultaġġ ta' Tkissir tad-Drain-Source | VGS=0V , ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKoeffiċjent tat-Temperatura | Referenza għal 25℃, ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Drejn-Sors statiku On-Reżistenza2 | VGS=10V , ID=30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Drejn-Sors statiku On-Reżistenza2 | VGS=4.5V, ID=20A | --- | 2.5 | 3.3 | mΩ |
| VGS(th) | Vultaġġ tal-Għatba tal-Bieb | VGS=VDS, ID=250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS(th) | VGS(th)Koeffiċjent tat-Temperatura | --- | -6.94 | --- | mV/℃ | |
| IDSS | Kurrent ta' Tnixxija tad-Drain-Source | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Kurrent tat-tnixxija tal-bieb-sors | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Transkonduttanza 'l quddiem | VDS=5V , ID=20A | --- | 55 | --- | S |
| Rg | Reżistenza tal-bieb | VDS=0V , VGS=0V , f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Ħlas totali tal-bieb (10V) | VDS=20V , VGS=10V , ID=10A | --- | 76 | 91 | nC |
| Qgs | Ħlas tal-Bieb-Sors | --- | 12 | 14.4 | ||
| Qgd | Ħlas tal-Gat-Ixxotta | --- | 15.5 | 18.6 | ||
| Td(on) | Ħin ta' Dewmien għall-Ixgħel | VDD=30V , VĠEN=10V , RG=1Ω, ID=1A ,RL=15Ω. | --- | 20 | 24 | ns |
| Tr | Ħin ta' Tlugħ | --- | 10 | 12 | ||
| Td (mitfi) | Ħin ta' Dewmien għat-Tfigħ | --- | 58 | 69 | ||
| Tf | Ħin tal-waqgħa | --- | 34 | 40 | ||
| Ciss | Kapaċità tad-dħul | VDS=20V , VGS=0V , f=1MHz | --- | 4350 | --- | pF |
| Coss | Kapaċità tal-ħruġ | --- | 690 | --- | ||
| Crss | Kapaċità tat-Trasferiment Reverse | --- | 370 | --- |
