WSD40110DN56G N-kanal 40V 110A DFN5X6-8 WINSOK MOSFET
Ħarsa ġenerali tal-prodott WINSOK MOSFET
Il-vultaġġ ta 'WSD4080DN56 MOSFET huwa 40V, il-kurrent huwa 85A, ir-reżistenza hija 4.5mΩ, il-kanal huwa N-channel, u l-pakkett huwa DFN5X6-8.
WINSOK MOSFET oqsma ta 'applikazzjoni
Tagħmir żgħir MOSFET, apparat li jinżamm fl-idejn MOSFET, muturi MOSFET.
WINSOK MOSFET jikkorrispondi għal numri oħra ta 'materjal tad-ditta
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG, STL64DN4F7AG, STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
Parametri MOSFET
Simbolu | Parametru | Klassifikazzjoni | Unitajiet |
VDS | Drain-Source Vultaġġ | 40 | V |
VGS | Gate-Source Vultaġġ | ±20 | V |
ID@TC=25℃ | Kurrent Kontinwu tad-Drain, VGS @ 10V1 | 85 | A |
ID@TC=100℃ | Kurrent Kontinwu tad-Drain, VGS @ 10V1 | 58 | A |
IDM | Ixxotta Pulsed Kurrent2 | 100 | A |
EAS | Enerġija valanga tal-Impuls Uniku3 | 110.5 | mJ |
IAS | Kurrent tal-valanga | 47 | A |
PD@TC=25℃ | Dissipazzjoni totali tal-Enerġija4 | 52.1 | W |
TSTG | Firxa tat-Temperatura tal-Ħażna | -55 sa 150 | ℃ |
TJ | Firxa tat-Temperatura tal-Junction Operattiva | -55 sa 150 | ℃ |
RθJA | Reżistenza Termali Junction-Ambient1 | 62 | ℃/W |
RθJC | Reżistenza Termali Junction-Każ1 | 2.4 | ℃/W |
Simbolu | Parametru | Kundizzjonijiet | Min. | Tip. | Max. | Unità |
BVDSS | Vultaġġ ta' Tkissir tad-Drain-Source | VGS=0V , ID=250uA | 40 | --- | --- | V |
RDS(ON) | Drejn-Sors statiku On-Reżistenza2 | VGS=10V, ID=10A | --- | 4.5 | 6.5 | mΩ |
VGS=4.5V, ID=5A | --- | 6.4 | 8.5 | |||
VGS(th) | Vultaġġ tal-Għatba tal-Bieb | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
IDSS | Kurrent ta' Tnixxija tad-Drain-Source | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Kurrent tat-tnixxija tal-bieb-sors | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
gfs | Transkonduttanza 'l quddiem | VDS=10V, ID=5A | --- | 27 | --- | S |
Qg | Ħlas totali tal-bieb (4.5V) | VDS=20V, VGS=4.5V, ID=10A | --- | 20 | --- | nC |
Qgs | Ħlas tal-Bieb-Sors | --- | 5.8 | --- | ||
Qgd | Ħlas tal-Gat-Ixxotta | --- | 9.5 | --- | ||
Td(on) | Ħin ta' Dewmien għall-Ixgħel | VDD=15V, VGS=10V RG=3.3Ω ID=1A | --- | 15.2 | --- | ns |
Tr | Żmien Żmien | --- | 8.8 | --- | ||
Td (mitfi) | Ħin ta' Dewmien għat-Tfigħ | --- | 74 | --- | ||
Tf | Ħin tal-waqgħa | --- | 7 | --- | ||
Ciss | Kapaċità tad-dħul | VDS=15V, VGS=0V, f=1MHz | --- | 2354 | --- | pF |
Coss | Kapaċità tal-ħruġ | --- | 215 | --- | ||
Crss | Kapaċità tat-Trasferiment Reverse | --- | 175 | --- | ||
IS | Sors Kontinwu Kurrent1,5 | VG=VD=0V , Forza Kurrent | --- | --- | 70 | A |
VSD | Vultaġġ 'l quddiem tad-diode2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1 | V |